Phosphorus oxide gate dielectric for black phosphorus field effect transistors
نویسندگان
چکیده
منابع مشابه
Black phosphorus field-effect transistors.
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor pe...
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We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photoc...
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Black phosphorus is considered a very promising semiconductor for two-dimensional field-effect transistors. Initially, the main disadvantage of this material was thought to be its poor air stability. However, recent studies have shown that this problem can be solved by suitable encapsulation. As such, long-term studies of the outstanding properties of black phosphorus devices have become possib...
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Two-dimensional black phosphorus (BP) has sparked enormous research interest due to its high carrier mobility, layer-dependent direct bandgap and outstanding in-plane anisotropic properties. BP is one of the few two-dimensional materials where it is possible to tune the bandgap over a wide energy range from the visible up to the infrared. In this article, we report the observation of a giant St...
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Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2018
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5011424